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Superparamagnetic tunnel junctions are important devices for a range of emerging technologies, but most existing compact models capture only their mean switching rates. Capturing qualitatively accurate analog dynamics of these devices will be important as the technology scales up. Here we present results using a one-dimensional overdamped Langevin equation that captures statistical properties of measured time traces, including voltage histograms, drift and diffusion characteristics as measured with KramersMoyal coefficients, and dwell-time distributions. While common macrospin models are more physically motivated magnetic models than the Langevin model, we show that for the device measured here, they capture even fewer of the measured experimental behaviors. 

In ferromagnetic systems lacking inversion symmetry, an applied electric field can control the ferromagnetic order parameters through the spin-orbit torque. The prototypical example is a bilayer heterostructure composed of a ferromagnet and a heavy metal that acts as a spin current source. In addition to such bilayers, spin-orbit coupling can mediate spin-orbit torques in ferromagnets that lack bulk inversion symmetry. A recently discovered example is the two-dimensional monolayer ferromagnet Fe3GeTe2. In this paper, we use first-principles calculations to study the spin-orbit torque and ensuing magnetic dynamics in this material. By expanding the torque versus magnetization direction as a series of vector spherical harmonics, we find that higher order terms (up to ℓ=4) are significant and play important roles in the magnetic dynamics. They give rise to deterministic, magnetic field-free electrical switching of perpendicular magnetization. 

Due to their interesting physical properties, myriad operational regimes, small size, and industrial fabrication maturity, magnetic tunnel junctions are uniquely suited for unlocking novel computing schemes for in-hardware neuromorphic computing. In this paper, we focus on the stochastic response of magnetic tunnel junctions, illustrating three different ways in which the probabilistic response of a device can be used to achieve useful neuromorphic computing power.